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SST12LF03 - High-Efficiency Front-end

General Description

A Initial release of Product Brief Date Jan 2012 ISBN:978-1-61341-997-7 © 2012 Silicon Storage Technology, Inc

a Microchip Technology Company.

All rights reserved.

Key Features

  • Input/output ports are matched to 50 internally and DC decoupled.
  • Packages available.
  • 20-contact UQFN.
  • 3mm x 3mm x 0.55mm.
  • All non-Pb (lead-free) devices are RoHS compliant Transmitter Chain:.
  • High gain:.
  • Typically 28 dB gain across 2.4.
  • 2.5 GHz over temperature -20°C to +85°C for Transmitter.
  • High linear output power (at 3.3V):.
  • Meets 802.11g OFDM ACPR requirement up to 21 dBm.
  • 3% added EVM up t.

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Datasheet Details

Part number SST12LF03
Manufacturer Silicon Storage Technology
File Size 35.51 KB
Description High-Efficiency Front-end
Datasheet download datasheet SST12LF03 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2.4 GHz High-Gain, High-Efficiency Front-end Module A Microchip Technology Company SST12LF03 Product Brief SST12LF03 is a fully integrated Front-End Module (FEM) for WLAN 802.11b/g/n and Bluetooth® systems. SST12LF03 RF module includes a PA, a LNA, and an antenna switch, making it ideal for WLAN/BT embedded applications where small size and high performance are required. Based on GaAs PHEMT/HBT technology, SST12LF03 operates within the frequency range of 2.4- 2.5 GHz with a very low DC-current consumption. The Transmitter chain has excellent linearity, typically 3% added EVM up to 19 dBm output power for 54 Mbps 802.11g operation, while meeting 802.11b spectrum mask at 22 dBm.