SST12LF03 Datasheet | Silicon Storage Technology

2.4 GHz High-Gain, High-Efficiency Front-end Module A Microchip Technology pany Product Brief SST12LF03 is a fully integrated Front-End Module (FEM) for WLAN 802.11b/g/n and Bluetooth® systems. SST12LF03 RF module includes a PA, a LNA, and an antenna switch, making it ideal for WLAN/BT embedded applications where small size and high performance are required. Based on Ga As PHEMT/HBT technology, SST12LF03 operates within the frequency range of 2.4- 2.5 GHz with a very low DC-current consumption. The Transmitter chain has excellent linearity, typically 3% added EVM up to 19 d Bm output power for 54 Mbps 802.11g operation, while meeting 802.11b spectrum mask at 22 d Bm. The receiver chain provides a low noise amplifier and has options for simultaneous WLAN and Bluetooth operation.The SST12LF03 is offered in a 20-contact UQFN package. Features - Input/output ports are matched to 50 internally and DC decoupled. - Packages available - 20-contact UQFN - 3mm x 3mm x 0.55mm - All non-Pb (lead-free) devices are Ro HS pliant Transmitter Chain: - High gain: - Typically 28 d B gain across 2.4- 2.5 GHz over temperature -20°C to +85°C for Transmitter. - High linear output power (at 3.3V): - Meets 802.11g OFDM ACPR requirement up to 21 d Bm - 3% added EVM up to 19 d Bm for 54 Mbps 802.11g signal - Meets 802.11b ACPR requirement up to 22 d Bm - High power-added efficiency/Low operating current for 802.11b/g/n applications - ~25% @ POUT = 22 d Bm for 802.11b/g - Low shut-down current (~2 µA) - Limited variation over temperature - ~1 d B power variation between -20°C to +85°C - ~2 d B gain variation between -20°C to +85°C - Temperature and load insensitive on-chip power detector - >20 d B dynamic range, temperature-stable, on-chip power detection Receiver Chain: - LNA ON: - Typically 12 d B gain - 3.1 d B noise figure - >5d B P1d...