Silicon Storage Technology SST26VF032
The SST26VF016/032 significantly improve performance and reliability, while lowering power consumption. These devices write (Program or Erase) with a single power supply of 2.7-3.6V. The total energy consumed is a function of the applied voltage, current, and time of application.| Part No. | SST26VF032 |
|---|---|
| Datasheet | SST26VF032 Download |
| Manufacturer |  Silicon Storage Technology |
| Description | Serial Quad I/O (SQI) Flash Memory |
| Buy | Stock & Price |
FEATURES
:● Single Voltage Read and Write Operations – 2.7-3.6V
● Serial Interface Architecture – Nibble-wide multiplexed I/O’s with SPI-like serial command structure - Mode 0 and Mode 3 – Single-bit, SPI backwards compatible - Read, High-Speed Read, and JEDEC ID Read
● High Speed Clock Frequency – 80 MHz - 320 Mbit/s sustained data rate
● Burst Modes – Continuous linear burst – 8/16/32/64 Byte linear burst with wrap-around
● Index Jump – Jump to address index within 256 Byte Page – Jump to address index within 64 KByte Block – Jump to address index in another 64 KByte Block
● Superior Reliability – Endurance: 100,000 cycles – Greater than 100 years data retention
● Low Power Consumption: – Active Read current: 12 mA (typical @ 80 MHz) – Standby current: 8 µA (typical)
● Fast Erase and Byte-Program: – Chip-Erase time: 35 ms (typical) – Sector-/Block-Erase time: 18 ms (typical)
● Page-Program – 256 Bytes per page – Fast Page Program time in 1 ms (typical)
● End-of-Write Detection – Soft...
