SST27SF010 Datasheet | Silicon Storage Technology

FEATURES : - Organized as 32K x8 / 64K x8 / 128K x8 / 256K x8 - 4.5-5.5V Read Operation - Superior Reliability - Endurance: At least 1000 Cycles - Greater than 100 years Data Retention - Low Power Consumption - Active Current: 20 m A (typical) - Standby Current: 10 µA (typical) - Fast Read Access Time - 70 ns - 90 ns - Fast Byte-Program Operation - Byte-Program Time: 20 µs (typical) - Chip Program Time: 0.7 seconds (typical) for SST27SF256 1.4 seconds (typical) for SST27SF512 2.8 seconds (typical) for SST27SF010 5.6 seconds (typical) for SST27SF020 - Electrical Erase Using Programmer - Does not require UV source - Chip-Erase Time: 100 ms (typical) - TTL I/O patibility - JEDEC Standard Byte-wide EPROM Pinouts - Packages Available - 32-pin PLCC - 32-pin TSOP (8mm x 14mm) - 28-pin PDIP for SST27SF256/512 - 32-pin PDIP for SST27SF010/020 PRODUCT DESCRIPTION The SST27SF256/512/010/020 are a 32K x8 / 64K x8 / 128K x8 / 256K x8 CMOS, Many-Time Programmable (MTP) low cost flash, manufactured with SST’s proprietary, high performance Super Flash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability pared with alternate approaches. These MTP devices can be electrically erased and programmed at least 1000 times using an external programmer with a 12 volt power supply. They have to be erased prior to programming. These devices conform to JEDEC standard pinouts for byte-wide memories. Featuring high performance Byte-Program, the SST27SF256/512/010/020 provide a Byte-Program time of 20 µs. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with an endurance of at least 1000 cycles. Data retention is rated at greater than 100 years. The SST27SF256/512/010/020 are suited for applications that require infrequent writes and low power nonvolatile storage. These devices will improve flexibility, efficiency, and performance while matching the low cost in nonvolatile...