SST32HF201 Overview
Multi-Chip Package (MCP), manufactured with SST’s proprietary, high performance SuperFlash technology. Featuring high performance Word-Program, the flash memory bank provides a maximum Word-Program time of 14 µsec. The entire flash memory bank can be erased and programmed word-by-word in typically 2 seconds for the SST32HF201/202 and 4 seconds for the SST32HF401/ 402, when using interface.
SST32HF201 Key Features
- MPF + SRAM boMemory
- SST32HF201: 128K x16 Flash + 64K x16 SRAM
- SST32HF202: 128K x16 Flash + 128K x16 SRAM
- SST32HF401: 256K x16 Flash + 64K x16 SRAM
- SST32HF402: 256K x16 Flash + 128K x16 SRAM
- Single 2.7-3.3V Read and Write Operations
- Concurrent Operation
- Read from or write to SRAM while Erase/Program Flash
- Superior Reliability
- Endurance: 100,000 Cycles (typical)