SST34HF1621 Description
These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick oxide tunneling injector to attain better reliability and manufacturability pared with alternate approaches. The SST34HF1621/1641 devices are ideal for applications such as cellular phones, GPSs, PDAs and other portable electronic devices in a low power and small form...
SST34HF1621 Key Features
- Flash Organization: 1M x16
- Dual-Bank Architecture for Concurrent Read/Write Operation
- 16 Mbit: 12 Mbit + 4 Mbit
- SRAM Organization
- 2 Mbit: 256K x8 or 128K x16
- 4 Mbit: 512K x8 or 256K x16
- Single 2.7-3.3V Read and Write Operations
- Superior Reliability
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention