Silicon Storage Technology SST39LF080
The SST39LF/VF080 and SST39LF/VF016 devices are 1M x8 / 2M x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF080/016 write (Program or Erase) with a 3.0-3.6V power supply.| Part No. | SST39LF080 |
|---|---|
| Datasheet | SST39LF080 Download |
| Manufacturer |  Silicon Storage Technology |
| Description | 8 Mbit / 16 Mbit (x8) Multi-Purpose Flash |
| Buy | Stock & Price |
FEATURES
:● Organized as 1M x8 / 2M x8
● Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF080/016 – 2.7-3.6V for SST39VF080/016
● Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention
● Low Power Consumption: – Active Current: 15 mA (typical) – Standby Current: 4 µA (typical) – Auto Low Power Mode: 4 µA (typical)
● Sector-Erase Capability – Uniform 4 KByte sectors
● Block-Erase Capability – Uniform 64 KByte blocks
● Fast Read Access Time: – 55 ns for SST39LF080/016 – 70 and 90 ns for SST39VF080/016
● Latched Address and Data
● Fast Erase and Byte-Program: – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Chip Rewrite Time: 15 seconds (typical) for SST39LF/VF080 30 seconds (typical) for SST39LF/VF016
● Automatic Write Timing – Internal VPP Generation
● End-of-Write Detection – Toggle Bit – Data# Polling
● CMOS I/O Compatibility
● JED...
