Silicon Storage Technology SST39LF512
The SST39LF512/010/020/040 and SST39VF512/010/ 020/040 are 64K x8, 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF512/ 010/020/040 devices write (Program or Erase) with a 3.03.6V power supply.| Part No. | SST39LF512 |
|---|---|
| Datasheet | SST39LF512 Download |
| Manufacturer |  Silicon Storage Technology |
| Description | 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash |
| Buy | Stock & Price |
FEATURES
:● Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
● Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF512/010/020/040 – 2.7-3.6V for SST39VF512/010/020/040
● Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention
● Low Power Consumption: – Active Current: 10 mA (typical) – Standby Current: 1 µA (typical)
● Sector-Erase Capability – Uniform 4 KByte sectors
● Fast Read Access Time: – 45 ns for SST39LF512/010/020/040 – 55 ns for SST39LF020/040 – 70 and 90 ns for SST39VF512/010/020/040
● Latched Address and Data
● Fast Erase and Byte-Program: – Sector-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Chip Rewrite Time: 1 second (typical) for SST39LF/VF512 2 seconds (typical) for SST39LF/VF010 4 seconds (typical) for SST39LF/VF020 8 seconds (typical) for SST39LF/VF040
● Automatic Write Timing – Internal VPP Generation
● End-of-Write Detection – Toggle Bit – Data# Polling...
