SST39SF020 Datasheet | Silicon Storage Technology

FEATURES : - Organized as 256 K X 8 - Single 5.0V Read and Write Operations - Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention - Low Power Consumption: - Active Current: 20 m A (typical) - Standby Current: 10 µA (typical) - Sector Erase Capability - Uniform 4 KByte sectors - Fast Read Access Time: - 70 and 90 ns - Latched Address and Data - Fast Sector Erase and Byte Program: - Sector Erase Time: 7 ms (typical) - Chip Erase Time: 15 ms (typical) - Byte Program time: 20 µs (typical) - Chip Rewrite Time: 5 seconds (typical) - Automatic Write Timing - Internal Vpp Generation - End of Write Detection - Toggle Bit - Data# Polling - TTL I/O patibility - JEDEC Standard - EEPROM Pinouts and mand set - Packages Available - 32-Pin PDIP - 32-Pin PLCC - 32-Pin TSOP (8mm x 14mm) 1 2 3 4 5 6 7 PRODUCT DESCRIPTION The SST39SF020 is a 256K x 8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS Super Flash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability pared with alternate approaches. The SST39SF020 device writes (Program or Erase) with a 5.0V-only power supply. The SST39SF020 device conforms to JEDEC standard pinouts for x8 memories. Featuring high performance byte program, the SST39SF020 device provides a maximum byte-program time of 30 µsec. The entire memory can be erased and programmed byte by byte typically in 5 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the pletion of Program operation. To protect against inadvertent write, the SST39SF020 device has on-chip hardware and software data protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST39SF020 device is offered with a guaranteed endurance of 10,000 cycles. Data retention is rated at greater than 100 years. The SST39SF020 device is suited for applications that require...