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SST39VF040

Manufacturer: Silicon Storage Technology

SST39VF040 datasheet by Silicon Storage Technology.

SST39VF040 datasheet preview

SST39VF040 Datasheet Details

Part number SST39VF040
Datasheet SST39VF040_SiliconStorageTechnology.pdf
File Size 255.39 KB
Manufacturer Silicon Storage Technology
Description CMOS Multi-Purpose Flash
SST39VF040 page 2 SST39VF040 page 3

SST39VF040 Overview

The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability pared with alternate approaches. The SST39LF010/020/040 devices write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF010/020/040 devices write with a 2.7-3.6V power supply.

SST39VF040 Key Features

  • Organized as 128K x8 / 256K x8 / 512K x8
  • Single Voltage Read and Write Operations
  • 3.0-3.6V for SST39LF010/020/040
  • 2.7-3.6V for SST39VF010/020/040
  • Superior Reliability
  • Endurance: 100,000 Cycles (typical)
  • Greater than 100 years Data Retention
  • Low Power Consumption (typical values at 14 MHz)
  • Active Current: 5 mA (typical)
  • Standby Current: 1 µA (typical)
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SST39VF080 8 Mbit / 16 Mbit (x8) Multi-Purpose Flash
SST39VF088 8 Mbit (x8) Multi-Purpose Flash
SST39VF100 1 Mbit (64K x16) Multi-Purpose Flash
SST39VF160 16 Mbit (x16) Multi-Purpose Flash
SST39VF1601 16 Mbit / 32 Mbit / (x16) Multi-Purpose Flash Plus
SST39VF1602 16 Mbit / 32 Mbit / (x16) Multi-Purpose Flash Plus
SST39VF160Q 16 Megabit (1M x 16-Bit) Multi-Purpose Flash

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