29SF512 Datasheet | Silicon Storage

512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040 SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040 SST29SF/VF512 / 010 / 020 / 0405.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) Byte-Program, Small Erase Sector flash memories Features : Preliminary Specifications - Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8 - Single Voltage Read and Write Operations - 5.0V-only for SST29SF512/010/020/040 - 2.7-3.6V for SST29VF512/010/020/040 - Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention - Low Power Consumption: - Active Current: 10 m A (typical) - Standby Current: 30 µA (typical) for SST29SF512/010/020/040 1 µA (typical) for SST29VF512/010/020/040 - Sector-Erase Capability - Uniform 128 Byte sectors - Fast Read Access Time: - 55 ns - 70 ns - Latched Address and Data - Fast Erase and Byte-Program: - Sector-Erase Time: 18 ms (typical) - Chip-Erase Time: 70 ms (typical) - Byte-Program Time: 14 µs (typical) - Chip Rewrite Time: 1 second (typical) for SST29SF/VF512 2 seconds (typical) for SST29SF/VF010 4 seconds (typical) for SST29SF/VF020 8 seconds (typical) for SST29SF/VF040 - Automatic Write...