SST29SF020 Datasheet | Silicon Storage

FEATURES : - Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8 - Single Voltage Read and Write Operations - 5.0V-only for SST29SF512/010/020/040 - 2.7-3.6V for SST29VF512/010/020/040 - Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention - Low Power Consumption: - Active Current: 10 m A (typical) - Standby Current: 30 µA (typical) for SST29SF512/010/020/040 1 µA (typical) for SST29VF512/010/020/040 - Sector-Erase Capability - Uniform 128 Byte sectors - Fast Read Access Time: - 55 ns - 70 ns - Latched Address and Data - Fast Erase and Byte-Program: - Sector-Erase Time: 18 ms (typical) - Chip-Erase Time: 70 ms (typical) - Byte-Program Time: 14 µs (typical) - Chip Rewrite Time: 1 second (typical) for SST29SF/VF512 2 seconds (typical) for SST29SF/VF010 4 seconds (typical) for SST29SF/VF020 8 seconds (typical) for SST29SF/VF040 - Automatic Write Timing - Internal VPP Generation - End-of-Write Detection - Toggle Bit - Data# Polling - TTL I/O patibility for SST29SFxxx - CMOS I/O patibility for SST29VFxxx - JEDEC Standard - Flash EEPROM Pinouts and mand sets - Packages Available - 32-pin PLCC - 32-pin TSOP (8mm x 14mm) - 32-pin PDIP PRODUCT DESCRIPTION The SST29SF512/010/020/040 and SST29VF512/010/ 020/040 are 64K x8 / 128K x8 / 256K x8 / 512K x8 CMOS Small-Sector Flash (SSF) manufactured with SST’s proprietary, high performance CMOS Super Flash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability pared with alternate approaches. The SST29SFxxx devices write (Program or Erase) with a 4.5-5.5V power supply. The SST29VFxxx devices write (Program or Erase) with a 2.73.6V power supply. These devices conform to JEDEC standard pinouts for x8 memories. Featuring high performance Byte-Program, the SST29SFxxx and SST29VFxxx devices provide a maximum Byte-Program time of 20 µsec. To protect against inadvertent write, they have on-chip hardware and Software Data Protection...