Silicon Storage SST29SF040
The SST29SF512/010/020/040 and SST29VF512/010/ 020/040 are 64K x8 / 128K x8 / 256K x8 / 512K x8 CMOS Small-Sector Flash (SSF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29SFxxx devices write (Program or Erase) with a 4.5-5.5V power supply.| Part No. | SST29SF040 |
|---|---|
| Datasheet | SST29SF040 Download |
| Manufacturer |  Silicon Storage |
| Description | 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash |
| Buy | Stock & Price |
FEATURES
:● Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
● Single Voltage Read and Write Operations – 5.0V-only for SST29SF512/010/020/040 – 2.7-3.6V for SST29VF512/010/020/040
● Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention
● Low Power Consumption: – Active Current: 10 mA (typical) – Standby Current: 30 µA (typical) for SST29SF512/010/020/040 1 µA (typical) for SST29VF512/010/020/040
● Sector-Erase Capability – Uniform 128 Byte sectors
● Fast Read Access Time: – 55 ns – 70 ns
● Latched Address and Data
● Fast Erase and Byte-Program: – Sector-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Chip Rewrite Time: 1 second (typical) for SST29SF/VF512 2 seconds (typical) for SST29SF/VF010 4 seconds (typical) for SST29SF/VF020 8 seconds (typical) for SST29SF/VF040
● Automatic Write Timing – Internal VPP Generation
● End-of-Write Detection – Toggle Bit – Data# Polling
● TTL I/O Compat...
