SST29SF040 Overview
The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability pared with alternate approaches. The SST29SFxxx devices write (Program or Erase) with a 4.5-5.5V power supply. The SST29VFxxx devices write (Program or Erase) with a 2.73.6V power supply.
SST29SF040 Key Features
- Single Voltage Read and Write Operations
- 5.0V-only for SST29SF512/010/020/040
- 2.7-3.6V for SST29VF512/010/020/040
- Superior Reliability
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention
- Low Power Consumption
- Active Current: 10 mA (typical)
- Sector-Erase Capability
- Uniform 128 Byte sectors