Silicon Wisdom SWK4606
The power dissipation PD is based on TJ(MAX)=150 ºC , using≤10s junction-to-ambient thermal resistance. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.| Part No. | SWK4606 |
|---|---|
| Datasheet | SWK4606 Download |
| Manufacturer | Silicon Wisdom |
| Description | 30V Complementary Enhancement-Mode MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
● Low gate charge.● Use as a load switch.
● Use in PWM applications SWK4606 30V Complementary Enhancement-Mode MOSFET Product Summary N-Channel P-Channel
● BVDSS = 30V
● RDS(on) (@VGS= 10V) < 30mΩ
● RDS(on) (@VGS= 4.5V) < 42mΩ
● BVDSS = -30V
● RDS(on) (@VGS= -10V) < 28mΩ
● RDS(on) (@VGS= -4.5V) < 44mΩ SOP-8 D1 D1 D2 D2 Pin1 S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (TA=25ºC) Drain Current (TA=75ºC) Pulsed Drain Current a Power Dissipation b (TA=25ºC) Power Dissipation b (TA=75ºC) Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ, TSTG Maximum N-Channel 30 ±20 6 4 24 2.5 1.0 -55 ~ +150 P-Channel -30 ±20 -6.5 -4.5 -28 2.5 1.0 -55 ~ +150 Thermal Characteristics Parameter Junction-to-Ambient a (t ≤ 10s) Junction-to-Ambient a,d (Steady-State) Junction-to-Lead (Steady-State) Symbol RθJA RθJL Maximum N-Channel 50 P-Channel 60 80 90 25 35 Units V V A A A W W ºC U...
