Siliconix 2N5639
n-channel JFET
ABSOLUTE MAXIMUM RATINGS
(25°C) Drain-Source Breakdown Voltage ................ 30V Drain-Gate Breakdown Voltage ................. 30V Source-Gate Breakdown Voltage ................. 30V Forward Gate Current ........................ 10mA .Total Device Dissipation Derate above 25°e .a.t.T.L.E..A.D..=.2..5.°e....... ... 625mW 5.68 mWre Operating Junction Temperature Range ..... -65 to +135°e Storage Temperature Range .............. -65 to +150°C Lead Temperature (1/16" from case for 10 seconds) ............... 3000 e BENEFITS● Low Cost
● Industry Standard Package
● Automatic Insertion Package
● Fast Switching trise < 5 ns (2N5638)
● Low Insertion Loss rDS(on} < 30 n (2N5638)
● Short Sample and Hold Aperture Time Crss <4 pF Plastic TO-92 See Section 6 o~: GDs c oc Bottom View G s 0 i*