2N5903 Datasheet PDF

ABSOLUTE MAXIMUM RATINGS

(25°C) Gate-to-Gate Voltage ........................ ±80V Gate-Drain or Gate-Source Voltage ............... -40 V Gate Current ................................ 10 mA Device Dissipation (Each Side), T A =25°C (Derate 3 mWrC) ........................ 367mW Total Device Dissipation, T A =25°C (Derate 4 mWrC) ........................ 500mW Storage Temperature Range .........●....-65 to +200°C H Siliconix Performance Curves NT See Section 4 BENEFITS
● Matching Characteristics Specified
● High Input Impedance IG = 1 pA Max (2N5906-9) TO●78 See Section 6 ~~0, 62 s, 82 Jc S2 0 50 D2 0, '0 06 G2 20 7 0, 10 S, Bottom View ~\°2 [ *

ELECTRICAL CHARACTERISTICS

(25°C unless otherwise noted) CharactenstlC 1-2. I~ I~ 4 S TA :5' ~ '6' C I, IGSS BVGSS VGS'off) VGS IG Gate Reverse Current Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate Source Voltage Gate Operating Current I...! lOSS 9 9" '0.'10 1;;1- 0 CISS 1'_2 V N ens 13 ~ "Is 111_4 I C '0' 15 1- 'n 16 NF Saturati...