• Part: 3N187
  • Description: n-channel dual gate MOSFET
  • Category: MOSFET
  • Manufacturer: Siliconix
  • Size: 106.63 KB
Download 3N187 Datasheet PDF
Siliconix
3N187
- 00 z C? depletion-type n-channel dual gate MOSFET H designed for - - - Performance Curves MCB See Section 4 - VHF Amplifiers - IF Amplifiers - Mixers - ABSOLUTE MAXIMUM RATINGS (25°C) Drain-to-Gate Voltage ... 20V Gate Current, Forward & Reverse 1 m A Drain-to-Source Voltage 20V Drain Current, Continuous 50m A Device Dissipation at TCASE = 25°C 1.2W Device Dissipation at T A = 25°C 330 m W Free Air Temperature above 25°C derate linearly 2.2 m Wr C Storage Temperature Range -65 to +200°C Lead Temperature 1/16" From Case for 10 Seconds .. 300°C BENEFITS - High Gain gfs Typically 12 mmhos - No Neutralization Required Low Crss < 0.03 p F - Automatic Gain Control with Second Gate TO- 72 See Section 5 "G, TIj" s G, G, - ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) Characteristic Min TV. M.. Unit Test Conditions - 2 - 3 - 4S...