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3N187 - n-channel dual gate MOSFET

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Part number 3N187
Manufacturer Siliconix
File Size 106.63 KB
Description n-channel dual gate MOSFET
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-..... 00 z C? depletion-type n-channel dual gate MOSFET H designed for • • • Performance Curves MCB See Section 4 • VHF Amplifiers • IF Amplifiers • Mixers *ABSOLUTE MAXIMUM RATINGS (25°C) Drain-to-Gate Voltage ...................... ... 20V Gate Current, Forward & Reverse ................ 1 mA Drain-to-Source Voltage ....................... 20V Drain Current, Continuous .................... 50mA Device Dissipation at TCASE = 25°C ............. 1.2W Device Dissipation at T A = 25°C ................. 330 mW Free Air Temperature above 25°C derate linearly 2.2 mWrC Storage Temperature Range .............. -65 to +200°C Lead Temperature 1/16" From Case for 10 Seconds .. 300°C BENEFITS • High Gain gfs Typically 12 mmhos • No Neutralization Required Low Crss < 0.