Siliconix BF900
n-channel dual gate MOSFET
| Part No. | BF900 |
|---|---|
| Datasheet | BF900 Download |
| Manufacturer |  Siliconix |
| Description | n-channel dual gate MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(25°C) Drain-to-Source Voltage ......................... 20 V Drain-to-Gate Voltage .. ...... ......... . . ..... 20 V Gate-to-Source Voltage .......................... ±6 V Gate-to-Gate Voltage........................ : .. ±12 V Continuous Drain Current ...................... 50 mA Gate Current ............................... ±10mA Total Continuous Device Dissipation at (or Below) TA = 25°C (Derate 1.5 mWrC to 125°C) ................ 150 mW Operating Temperature Range............. -55 to +125°C Storage Temperature Range .............. -55 to +150°C Lead Tem peratu re (1/16" from case for 10 seconds) ............... 260°C BENEFITS● High Gain gfs Typically 14 mmhos
● No Neutralization Required Low Crss Typically 0.025 pF
● Automatic Gain Control with Second Gate
● Rugged Zener Diode Input Protection " X ' 0084 See Section 5 G, "'111' G, G2 s
ELECTRICAL CHARACTERISTICS
(25°C unless otherwise noted) 1 1- IG1S$ 2 IG2SS - 3 avOS -S 4 T BVG1SS - ;,5 BVG2SS -c -6 VG1S(off) 7 VG2S(offl - 8 'OS -~ 9 9f, (Note 11 10 N Ciss -A 11 M Crss -' 12 C Cos.