ABSOLUTE MAXIMUM RATINGS
(TA = 25 DC unless otherwise noted) PARAMETERS/TEST CONDITIONS Forward Current Total Device Dissipation Storage Temperature Lead Temperature (1/16" from case for 10 seconds) SYMBOL IF PD Tstg h LIMIT 50 400 -55 to 125 300 UNITS mA mW °C 4-64 .:y-Siliconix ~ incorporated ELECTRICAL CHARACTERISTICS
1 PARAMETER STATIC SYMBOL Reverse Current IR Reverse Breakdown Voltage BVR Forward Voltage Drop VF DYNAMIC Reverse Capacitance Differential Capacitance CR iC R1- C R2 i DPAD1 SERIES TEST CONDITIONS TYp2 LIMITS MIN MAX UNIT VR = -20 V DPADl DPAD2 DPAD5 DPAD10 DPAD20 DPAD50 DPAD100 IR = -1 J.LA DPAD1, 2, 5 DPAD10, 20 DPAD50, 100 IF = 1 rnA -0.2 -1 -2 -3 -5 -10 -15 -60 -55 0.7 -1 -2 -5 -10 pA -20 -50 -100 -45 -120 -35 V 1.5 VR= -5 V f = 1 MHz DPAD1,2,5 DPAD10, 20 DPAD50, 100 VRI =VR2 = -5 V, f = 1 MHz 0.6 1 0.07 O.B 2 pF 0.2 NOTES: 1. T A = 25●C unless otherwise noted. 2. For design aid only, not subject to production testing. III 4-65
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