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n-channel JFETs
designed for • • •
• General Purpose Switching
H
Performance Curves NP See Section 4
BENEFITS • Very Low Leakage
ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-Drain or Gate-Source Voltage (Note 1) Gate CurreRt Total Device Dissipation
(25°C Free-Air Temperature) Power Derating (to +125°C) Storage Temperature Range Operating Temperature Range, Lead Temperature
(1/16" from case for 10 seconds)
-25 V 50 mA
350 mW , 3,5 mWrC -55 to +125°C -55 to +125°C
300°C
TO-lOS See Section 5
"~: ~
G
EDD 0210 s
BOTTOM VIEW
D ~
S
ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
Characteristic
E204 Min Typ Max
Unit
Test Conditions
1
1-
2S
-T
3
A T
-----, I
4C 5
6
-0
y
7N
-A
8
-
M I C
9
-
10
IGSS
Gate Reverse Current (Note 2)
-100 pA V OS " 0, V GS " -20 V
Gate-Sou