J315
n-channel JFETs designed for
- -
- - UHF Amplifiers
H c.. w.... c.n
Performance Curves NZF See Section 4
BENEFITS
- High Power Gain 10 d B Typical at 450 MHz
- Low Noise 3.4 d B Typical at 450 MHz
- Low Intermodulation Distortion
- Hermetic Stripline Package
ABSOLUTE MAXIMUM RATINGS (25°C)
Gate- Drain or Gate- Source Voltage -25 V Gate Current 10m A Total Device Dissipation (Derate 1.0 m W/o C) 175m W Storage Temperature Range -65 to +200°C Operating Temperature Range -65 to +200°C Lead Temperatu re
(1/16" from case for 10 seconds) 300°C
~x" s
Note: G- is back Gate contact.
00- 84 See Section 5
.~:
ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
Characteristic
"-2
IGSS
- A
BVGSS
-4
VGSloff)
5 l OSS
Gate Reverse Current
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Current (Note 1)
,-6
'7
0 Y N gfs...
