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-:e
enhancement-type
p-channel MOSFET
H
designed for • • •
Performance Curves MT See Section 4
• Analog Switches • Digital Switching
BENEFITS
• High Off-Isolation
IO(off) < 100 pA IS(off) < 100 pA
• Very High Input Impedance
Cgs < 0.5 pF IGSS < 100 pA
• Rugged Zener Protected Input
ABSOLUTE MAXIMUM RATINGS (25°C)
Drain-to-Source Voltage ...................... -30 V
Gate-to-Source Voltage . . . . . . . . . . . . . . . . . . . . . . -30V
Gate-to-Drain Voltage ........................ -30 V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -50 mA
Gate Current (Forward Direction for Zener Clamp) +0.1 mA Operating Junction Temperature ......... -55 to +125°C Total Device Dissipation
(Derate 2.25 mW;oC to 125°C) ............. 225mW Storage Temperature ...............
M104 Datasheet
