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MFE823
P-Channel Enhancement-Mode MOS Transistor
PRODUCT SUMMARY
PART V(BR)OSS 9fs
NUMBER (V)
(mS)
10 (rnA) PACKAGE
MFE823
-25
1
-30
TQ-18
Performance Curves: MRA (See Section 7)
~Siliconix ~ incorporated
TO-18
BOTTOM VIEW
1 DRAIN 2 GATE
3 SOURCE, SUBSTRATE CASE
= ABSOLUTE MAXIMUM RATINGS (TA 25°C unless otherwise noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
MFE823
UNITS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Power Dissipation
TA= 25°C TA= 25°C
Power Derating
Operating Junction
Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
Vos VGS 10 Po
TJ T stg
TL
-25 ±10 -30 375
3 -55 to 150 -65 to 200
300
V mA mW mW/oC
°C
6-38
.
MFE823 Datasheet
