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ND2020E - N-Channel Depletion-Mode MOS Transistors

Download the ND2020E datasheet PDF. This datasheet also covers the ND2020L variant, as both devices belong to the same n-channel depletion-mode mos transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (ND2020L-Siliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ND2020E
Manufacturer Siliconix
File Size 98.76 KB
Description N-Channel Depletion-Mode MOS Transistors
Datasheet download datasheet ND2020E Datasheet

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Other Datasheets by Siliconix

Part Number Description
ND2020L N-Channel Depletion-Mode MOS Transistors
ND2012E N-Channel Depletion-Mode MOS Transistors
ND2012L N-Channel Depletion-Mode MOS Transistors
ND2406B N-Channel Depletion-Mode MOS Transistors
ND2406L N-Channel Depletion-Mode MOS Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ND2020 SERIES N-Channel Depletion-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSV rOS(ON) 10 NUMBER (V) (il) (A) PACKAGE ND2020L 200 20 0.132 TO-92 ND2020E 200 20 0.18 TO-206AC a'Y"Siliconix ~ incorporated TO-92 BOTTOM VIEW ~§ 1 SOURCE 2 GATE 3 DRAIN TO-206AC (TO-52) BOTTOM VIEW Performance Curves: VDDQ20 (See Section 7) 1 SOURCE 2 GATE 3 DRAIN & CASE = ABSOLUTE MAXIMUM RATINGS (TA 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL ND2020L ND2020E 2 Drain-Source Voltage Vos 200 200 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 TA= 25°C TA = 100°C Power Dissipation TA= 25°C TA = 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) VGS 10 10M Po TJ. Tstg h ±30 0.132 0.