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ND2410 SERIES
N-Channel Depletion-Mode MOS Transistors
PRODUCT SUMMARY
PART V(BR)OSV reStON) 10
NUMBER (V)
(0) (A) PACKAGE
ND2410L 240
10 0.18 TO-92
ND2410B 240
10 0.46 TO-205AF
.rY"Siliconix
~ incorporated
TO-92
BOTTOM VIEW
~(§)
1 SOURCE 2 GATE 3 DRAIN
TO-205AF
BOTTOM VIEW
Performance Curves: VDDV24 (See Section 7)
1 SOURCE
2 GATE 3 DRAIN & CASE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
ND2410L
ND2410B 2
Drain-Source Voltage
Vos
240
240
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current 1
TA= 25DC T A = 100DC
Power Dissipation
TA= 25DC TA = 100DC
Operating Junction and Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
VGS 10 10M PD TJ. Tstg
TL
±30 0.18 0.12
±20 0.46 0.
ND2410L Datasheet
