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SD2110 - n-channel dual enhancement mode lateral D-MOS FET

Key Features

  • High Figure-of-Merit gfs/C.
  • Ultra Low Feedback Capacitance 0.3 pF.
  • Low Output Capacitance.
  • Low Input (Gate) Leakage.
  • Non-Critical Operating CurrentNoltage.
  • Matched Characteristics.

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Datasheet Details

Part number SD2110
Manufacturer Siliconix
File Size 80.93 KB
Description n-channel dual enhancement mode lateral D-MOS FET
Datasheet download datasheet SD2110 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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n-channel dual enhancement mode -o lateral D-MOS FETs c::4 designed lor. · · Q CI) • Wideband DiHerential Amplifiers • Cascode High Slew Rate Amplifiers • Single Ended High-Speed Amps • High-Speed Analog Comparators • Sample & Hold Ckts • High-Speed Matched Analog Switches H Silicanix FEATURES • High Figure-of-Merit gfs/C • Ultra Low Feedback Capacitance 0.3 pF • Low Output Capacitance • Low Input (Gate) Leakage • Non-Critical Operating CurrentNoltage • Matched Characteristics BENEFITS • High Frequency Performance • High Slew Rate • High Speed Switching • Tight Temperature Tracking ABSOLUTE MAXIMUM RATINGS (25°C) Drain-to-Drain Voltage ....................... ±25V Drain-Source Voltage ........................ +25V Drain Current ..............................