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SD2120 - n-channel dual enhancement mode lateral D-MOS FET

Download the SD2120 datasheet PDF. This datasheet also covers the SD2110 variant, as both devices belong to the same n-channel dual enhancement mode lateral d-mos fet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Figure-of-Merit gfs/C.
  • Ultra Low Feedback Capacitance 0.3 pF.
  • Low Output Capacitance.
  • Low Input (Gate) Leakage.
  • Non-Critical Operating CurrentNoltage.
  • Matched Characteristics.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SD2110-Siliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SD2120
Manufacturer Siliconix
File Size 80.93 KB
Description n-channel dual enhancement mode lateral D-MOS FET
Datasheet download datasheet SD2120 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
n-channel dual enhancement mode -o lateral D-MOS FETs c::4 designed lor. · · Q CI) • Wideband DiHerential Amplifiers • Cascode High Slew Rate Amplifiers • Single Ended High-Speed Amps • High-Speed Analog Comparators • Sample & Hold Ckts • High-Speed Matched Analog Switches H Silicanix FEATURES • High Figure-of-Merit gfs/C • Ultra Low Feedback Capacitance 0.3 pF • Low Output Capacitance • Low Input (Gate) Leakage • Non-Critical Operating CurrentNoltage • Matched Characteristics BENEFITS • High Frequency Performance • High Slew Rate • High Speed Switching • Tight Temperature Tracking ABSOLUTE MAXIMUM RATINGS (25°C) Drain-to-Drain Voltage ....................... ±25V Drain-Source Voltage ........................ +25V Drain Current ..............................