SD5200 Description
The SILICONIX D-MOS SD5200 monolithic arrays of silicon. insulated-gate, field-effect transistors using the N-channel enchancement mode technology. This device is designed to handle a wide variety of driver applications.
SD5200 Key Features
- Low Input Capacitance-2.4 pF
- Low Feedback Capacitance-0.3 pF
- Low Output Capacitance-1.3 pF
- ±10V Analog Signal Range
- Low Propagation Delay Time-600 ps
- Low on Resistance-30n
- Low Feedthrough and Feedback Transients
- Ion Implanted for Greater Reliability
- High Channel-to-Channellsolation-107 dB
- Transient Protection for Gates