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n-channel enhancement- H
mode lateral
Silicanix
D-MOS FETs
designed for Military and Industrial Applications • • •
High Speed Switching
• Analog Switch • Multiplexer • Digital Switch • A to D Converters • D to A Converters
• Choppers
•• Sample and Hold
BENEFITS • High Speed Switching • Ultra Low Feedback
Capacitance
• Low RDS(ON) • Diode Protected Gate
ABSOLUTE MAXIMUM RATINGS (OC) Drain Current __ ............................ 50 rnA Total Device Dissipation at 25°C
Case Temperature .......................... 1.2W Storage Temperature Range ........ -65° to +150°C Lead Temperature
(1/16" from case for 10 sec) ................ 300°C Operating Temperature Range ...... -55° to + 150°C
TO-72 See Section 6
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SI2400 Datasheet
