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SMP20P10
P-Channel Enhancement-Mode Transistor
Product Summary
V(BR)DSS (V)
–100 TO-220AB
rDS(on) (W)
0.20
ID (A)
–20
D
G
Drain Connected to Tab G D S Top View S N-Channel MOSFET
Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) L = 0.