U1994E
n-channel silicon JFET
..designed for
- -
- VHF Amplifiers
II Mixers
ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-Drain or Gate-Source Voltage _ .
- -30 V Forward Gate Current . 10m A
Total Continuous Device Dissipation at (or Below) T A = 25°C
(Derate 3.5 m W;o C to 125°C) 350 m W Storage Temperature Range .... . .. -55 to +125°C Lead Temperature
(1/16" from case for 10 seconds) 300°C
Performance Curves NH See Section 4
BENEFITS
- Low Noise NF = 3 d B Typical at 400 MHz
- Wideband High Gfs/Ciss Ratio
- Specified for Operation at 400 MHz
TO-l06 See Section 5
G~:
C) D 0210
ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
S BOTTOM VIEW
1- IGSS 2S r 13 BVGSS
1-:; T 1- VGSloffl I~ C VGS l OSS
70 I-y
9fs
I~N 90S
9 A erss I-'-M
10 1 Ciss
I " C Coss
Characteristic
Gate Reverse Current
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voltage Saturation Drain Current (Note 1)...
