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monolithic dual n-channel JFETs designed for • • •
• Differential Amplifiers
ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-Drain or Gate-Source Voltage ______ ••••••••• -50 V Gate Current ••••••••••••••••••••••••••••••• 50mA Total Device Dissipation at 25°C
(Derate 1.7 mW/oC to 200°C) ••••••••••••••• 300mW
Storage Temperature Range •••••••••••••• -65 to +200°C Lead Temperature
(1/16" from case for 10 seconds) •....•••••.•••• 300°C
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Siliconix
Performance Curves NQP See Section 4
BENEFITS
• Good Matching Characteristics
TO-71 See Section 6
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ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
Characteristic
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U231 Datasheet
