U257 Description
matched dual n-channel JFET designed for Wideband DiHerential Amplifiers H Siliconix Performance Curves NZP-D, NNZ See Section 4 . BENEFITS High Gain through 100 MHz 9fs = 4500 ",mho Minimum Matching Characteristics Specified RATINGS (25°C) Gate-Drain or Gate-Source Voltage ........ 50mA Device Dissipation (Each Side).