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matched dual n-channel JFET
designed for • • •
• Wideband DiHerential Amplifiers
H
Siliconix
Performance Curves NZP-D, NNZ
See Section 4
.
BENEFITS
• High Gain through 100 MHz 9fs = 4500 ",mho Minimum
• Matching Characteristics Specified
ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-Drain or Gate-Source Voltage ........•...... -25 V
Gate Current ...•....•.................•.... 50mA
Device Dissipation (Each Side). T A =85°C
(Derate 3.85 mWrC) .......•.•....•.....•. 250 mW
Total Device Dissipation, TA =85°C
(Derate 7.7 mWrC) ........ '..........•.... 500 mW Storage Temperature Range .....••..•... -65 to + 200°C Lead Temperature
(1/16" from case for 10 seconds) ...........•...300°C
TO-7B So.
U257 Datasheet
