U428 - monolithic dual n-channel JFET

Siliconix

Download the U428 datasheet PDF. This datasheet also covers the U427 variant, as both devices belong to the same monolithic dual n-channel jfet family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

U428 monolithic dual n-channel jfet by Siliconix - Datasheet Preview — Note: The manufacturer provides a single datasheet file (U427-Siliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	U428
Manufacturer	Siliconix
File Size	82.42 KB
Description	monolithic dual n-channel JFET
Datasheet	U428 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
U4280BM	AM / FM - PLL	TEMIC Semiconductors
U4285BM	AM / FM - PLL	TEMIC Semiconductors
U4286BM	AM / FM-PLL	TEMIC Semiconductors
U428B	(U427B / U428B) Driver	Telefunken Microelectronics
U420B	IRFU420B	Fairchild

Other Datasheets by Siliconix

Part Number	Description
U421	N-Channel JFET Pairs
U422	N-Channel JFET Pairs
U423	N-Channel JFET Pairs
U424	N-Channel JFET Pairs
U425	N-Channel JFET Pairs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

monolithic dual n-channel JFETs designed for • • • • Very High Input Impedance DiHerential Amplifiers Electrometers • Impedance Converters Performance Curves NNT See Section 4 BENEFITS H --Siliconix • High Input Impedance IG = 5 pA (U427) • High Gain 9fs = 120 Mmho Minimum @ 10 = 30 MA • Low Power Supply Operation VGS(off} = 2 V Maximum (U427) • Minimum System Error and Calibration 25 mV Maximum Offset ABSOLUTE MAXIMUM RATINGS (25°C) TO-78 Saa Section 6 Gate-to-Gate Voltage Gate-Drain or Gate-Source Voltage Gate Current =Device Dissipation (Each Side), T A 25°C ±40V -40 V 10 mA ~~G, G2 (Derate 3.2 mW;oC to 150°C) . 400mW 8, 82 =Total Device Dissipation, T A 25° C (Derate 6.