ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMIT UNITS Gate-Drain Voltage Vao Gate-Source Voltage Vas Forward Current Power Dissipation Power Derating Operating Junction Temperature la Per Side Total Po Per Side Total TJ Storage Temperature T stg Lead Temperature (1/16" from case for 10 seconds) h -25 -25 10 300 500 2.4 4 -55 to 150 -65 to 200 300 V mA mW mW/oC °C 4-168 fCrSiliconix ~ incorporated ELECTRICAL CHARACTERISTICS
1 PARAMETER SYMBOL TEST CONDITIONS STATIC Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Current 3 Gate Reverse Current Gate Operating Current Gate-Source Forward Voltage V(BR)GSS VGS(OFF) IDSS IGSS IG VGS(F) I G =-l.1lA,VDS =OV VDS = 10 V, ID = 1 nA VDS = 10 V, VGS = 0 V I VGS = -15 V VDS = 0 V TA =150●C VDG = 10 V ID = 5 rnA I TA=150●C IG = 10 rnA, VDS = 0 V DYNAMIC Common-Source Forward g,s Transconductance Common-Source Output Conductance gos Common-Source Input Capacitance Ciss Common...
Siliconix
