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~ voltage-controlled ~ resistor FETs
designed for • • •
• Small Signal Attenuators • Filters • Amplifier Gain Control • Oscillator Amplitude Control
H
Silicanix
ABSOLUTE MAXIMUM RATING (25°C)
Gate-Drain or Gate-Source Voltage ....... _......... 25 V Gate Current ................................ 10 mA
Total Device Dissipation at TA = 25°C
(Derate at 2.0 mW/oC to 175°C) .............. 300 mW Storage Temperature Range ..............
VCR11N Datasheet
