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VN0808 SERIES
N-Channel Enhancement-Mode MOS Transistors
PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER
(V)
(.(1 )
(A) PACKAGE
VNOSOSL
SO
4
0.30
TO-92
VNOSOSM
SO
4
0.33 TO-237
TO-92
BOTTOM VIEW
1 SOURCE 2 GATE 3 DRAIN
Performance Curves: VNDQ09 (See Section 7)
TO-237
BOTTOM VIEW
1 SOURCE 2 GATE 3 DRAIN
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
VN0808L
VN0808M
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 2 Pulsed Drain Current 1. 2
TA= 25°C TA = 100°C
Power Dissipation
TA= 25°C TA = 100°C
Operating Junction and Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
VOS VGS 10
10M Po TJ. Tstg
h
SO
SO
±30 0.30
±30 0.33
0.19
0.21
1.
VN0808L Datasheet
