Datasheet4U Logo Datasheet4U.com

VN0808M - N-Channel Enhancement-Mode MOS Transistors

Download the VN0808M datasheet PDF. This datasheet also covers the VN0808L variant, as both devices belong to the same n-channel enhancement-mode mos transistors family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VN0808L-Siliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VN0808M
Manufacturer Siliconix
File Size 96.29 KB
Description N-Channel Enhancement-Mode MOS Transistors
Datasheet download datasheet VN0808M Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
VN0808 N-Channel Vertical DMOS FET Supertex Inc
VN0104 N-Channel Vertical DMOS FET Supertex
VN0104N2 Understanding MOSFET Supertex
VN0104N3 Understanding MOSFET Supertex
VN0104N5 Understanding MOSFET Supertex

Other Datasheets by Siliconix

Part Number Description
VN0808L N-Channel Enhancement-Mode MOS Transistors
VN0300B N-Channel Enhancement-Mode MOS Transistors
VN0300L N-Channel Enhancement-Mode MOS Transistors
VN0300M N-Channel Enhancement-Mode MOS Transistors
VN0603L N-Channel Enhancement-Mode MOS Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
flr]l""Siliconix ~ incorporated VN0808 SERIES N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (.(1 ) (A) PACKAGE VNOSOSL SO 4 0.30 TO-92 VNOSOSM SO 4 0.33 TO-237 TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDQ09 (See Section 7) TO-237 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL VN0808L VN0808M Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 2 Pulsed Drain Current 1. 2 TA= 25°C TA = 100°C Power Dissipation TA= 25°C TA = 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) VOS VGS 10 10M Po TJ. Tstg h SO SO ±30 0.30 ±30 0.33 0.19 0.21 1.