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VN1210M - N-Channel Enhancement-Mode MOS Transistors

Download the VN1210M datasheet PDF. This datasheet also covers the VN1210L variant, as both devices belong to the same n-channel enhancement-mode mos transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (VN1210L-Siliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VN1210M
Manufacturer Siliconix
File Size 94.88 KB
Description N-Channel Enhancement-Mode MOS Transistors
Datasheet download datasheet VN1210M Datasheet

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Other Datasheets by Siliconix

Part Number Description
VN1210L N-Channel Enhancement-Mode MOS Transistors
VN1206B N-Channel MOSFET
VN1206D N-Channel MOSFET
VN1206L N-Channel MOSFET
VN1206M N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
fCrSiliconix ~ incorporated VN1210 SERIES N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (il) (A) PACKAGE VN1210L 120 10 0.18 TO-92 VN1210M 120 10 0.20 TO-237 Performance Curves: VNDQ12 (See Section 7) TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN TO-237 BOTTOM VIEW ~ ~ 1 SOURCE 2 GATE 3 DRAIN & TAB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERSITEST CONDITIONS SYMBOL Drain-Source Voltage VOS Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current 1 TA= 25°C TA = 100°C Power Dissipation TA= 25°C TA = 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) 10 10M Po TJ. Tstg TL VN1210L VN1210M 120 120 ±30 0.18 ±30 0.20 0.