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.r'Siliconix
~ incorporated
VN2010 SERIES
N-Channel Enhancement-Mode MOS Transistors
PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER
(V)
(Il)
(A) PACKAGE
VN2010L
200
10
0.19 TO-92
VN2020L
200
20
0.08 TO-92
Performance Curves: VNDQ20 (See Section 7)
TO-92
BOTTOM VIEW
1 SOURCE 2 GATE 3 DRAIN
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
VN2010L
VN2020L
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current 1
TA= 25°C T A = 100°C
Power Dissipation
TA= 25°C TA = 100°C
Operating Junction and Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
Vos VGS 10
10M Po Tj. Tstg
h
200
200
±30 0.19
±30 0.08
0.12
0.055
0.8 0.8 0.32
0.5 0.8 0.
VN2010L Datasheet
