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VN2222L - N-Channel Enhancement-Mode MOS Transistors

Download the VN2222L datasheet PDF. This datasheet also covers the VN2222KM variant, as both devices belong to the same n-channel enhancement-mode mos transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • internal gate-source zener diode VN2222KM 125 VN2222L 156 UNITS °C/W 6-89 VN2222KM, VN2222L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VN2222KM-Siliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VN2222L
Manufacturer Siliconix
File Size 97.44 KB
Description N-Channel Enhancement-Mode MOS Transistors
Datasheet download datasheet VN2222L Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
flCrSiliconix ~ incorporated VN2222KM, VN2222L N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (.n ) (A) PACKAGE VN2222KM 60 7.5 0.25 TO-237 VN2222L 60 7.5 0.23 TO-92 TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDP06 (See Section 7) TO-237 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL VN2222KM VN2222L Drain-Source Voltage Gate-Source Voltage 2 Continuous Drain Current Pulsed Drain Current 1 TA= 25°C T A = 100°C Power Dissipation T A= 25°C TA = 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) Vos VGS 10 10M Po TJ' T stg h 60 60 +15, -0.3 0.25 0.16 +15, -0.