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.r'Siliconix
.L;II incorporated
PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER (V)
(.n )
(A)
PACKAGE
VN45350L 450
350 0.030 TO-92
VN45350T 450
350 0.020 SOT-23
Performance Curves: VND050 (See Section 7)
PRODUCT MARKING
I VN45350T
V04
VN45350 SERIES
N-Channel Enhancement-Mode MOS Transistors
TO-92
BOTTOM VIEW
~~
~
~
1 SOURCE 2 GATE 3 DRAIN
SOT-23
TOP VIEW
2
3
1 DRAIN 2 SOURCE 3 GATE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Vos
Gate-Source Voltage
Vas
Continuous Drain Current Pulsed Drain Current 1
TA= 25°C TA = 100°C
Power Dissipation
TA= 25°C TA = 100°C
Operating Junction and Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
10 10M
Po TJ.
VN45350 Datasheet
