VN46AFD Datasheet | Siliconix

.:r'Siliconix ~ incorporated N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY V(BR)e SS res (ON) Ie (V) (il) (A) PACKAGE TO-220SD Performance Curves: VNOQ06 (See Section 7) TO-220SD TOP VIEW o 1 SOURCE 2 GATE 3 & TAB - DRAIN = ABSOLUTE MAXIMUM RATINGS (TC 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 Tc= 25°C Tc = 100°C Power Dissipation Tc= 25°C Tc = 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) SYMBOL Ves VGS Ie le M Po TJ. T stg h VN46AFD 40 ±30 1.46 0.92 3 15 6 -55 to 150 300 UNITS V A W °C THERMAL RESISTANCE THERMAL RESISTANCE Junction-to-Case SYMBOL Rth JC 1Pulse width limited by maximum junction temperature VN46AFD...