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.:r'Siliconix
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VN46AFD
N-Channel Enhancement-Mode MOS Transistor
PRODUCT SUMMARY
V(BR)eSS res (ON)
Ie
(V)
(il)
(A)
40
3
1.46
PACKAGE TO-220SD
Performance Curves: VNOQ06 (See Section 7)
TO-220SD
TOP VIEW
o
1 SOURCE 2 GATE 3 & TAB - DRAIN
123
= ABSOLUTE MAXIMUM RATINGS (TC 25°C unless otherwise noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current 1
Tc= 25°C Tc = 100°C
Power Dissipation
Tc= 25°C Tc = 100°C
Operating Junction and Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
SYMBOL Ves VGS Ie
leM Po TJ. T stg
h
VN46AFD 40 ±30 1.46 0.