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VNMA06
tcrSiliconix
~ incorporated
N·Channel Enhancement·Mode MOSFET
DESIGNED FOR:
• Switching
FEATURES
• High Speed for Military Applications (see VNDQ06 for Industrial Applications)
I ITYPE
PACKAGE
DEVICE
Single TO-205AD. JANTX2N6660
GEOMETRY DIAGRAM
0.012 (0.304)
0.010 (0.254)
T 0.077 (1.956)
Source Pad -I+--+---HIII+
Gate Pad ---1f+--l---HIII-
0.0094
(0.24)
0.0095
(0.241)
9 mil
7-158
~Siliconix ~ incorporated TYPICAL CHARACTERISTICS
Output Characteristics
I2.0 Vas = 10 V
9V
1.6 '/
8V
1.2
10 (A) 0.8
r;'" r;'"
7V 6V 5V
rr
0.4
4V 3V
0
a 10 20 30 40
Vos (V)
50
VNMA06
Ohmic Region Characteristics 2. 0 r--...,.....-r-~"T"--r-"T"""...,.......,r-...,.....-,
1.6 1--t--t-+---1--/-+--f-~",","
1 .2 1--t--t-+---1--/n..r:~~110 (A)
0.
VNMA06 Datasheet
