VP2410 - P-Channel Enhancement-Mode MOS Transistors

Siliconix

Datasheet Details

Part number	VP2410
Manufacturer	Siliconix
File Size	94.31 KB
Description	P-Channel Enhancement-Mode MOS Transistors
Datasheet	VP2410 Datasheet
Additional preview pages of the VP2410 datasheet.

📁 Similar Datasheet

VP2410L - P-Channel 240-V (D-S) MOSFET (Vishay)
VP2410L - P-Channel Enhancement-Mode MOSFET Transistor (TEMIC)
VP2450 - P-Channel Enhancement-Mode Vertical DMOS FETs (Supertex Inc)
VP2450 - P-Channel Enhancement-Mode Vertical DMOS FET (Microchip)
VP2-0066-R - Inductors and Transformers (EATON)
VP2-0083-R - Inductors and Transformers (EATON)
VP2-0116-R - Inductors and Transformers (EATON)
VP2-0216-R - Inductors and Transformers (EATON)
VP2-1600-R - Inductors and Transformers (EATON)
VP2005A - 10/100 BASE-TX VOICE OVER IP MAGNETICS (Bothhand USA)

Other Datasheets by Siliconix

Full PDF Text Transcription

Click to expand full text

VP2410 SERIES P-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (.0) (A) PACKAGE VP2410L -240 10 -0.18 TO-92 VP2410B -240 10 -0.17 TO-205AF Performance Curves: VPDV24 (See Section 7) I!CrSiliconix ~ incorporated TO-92 BOTTOM VIEW ~~ ~ ~ 1 SOURCE 2 GATE 3 DRAIN TO-205AF BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN & CASE ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Vos Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current 1 TA= 25°C TA = 100°C Power Dissipation TA= 25°C TA = 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) 10 10M PD TJ. Tstg h VP2410L VP2410B -240 -240 ±30 -0.

Published: Dec 6, 2018 |