Siliconix VQ2001J
P-Channel Enhancement-Mode MOS Transistors
FEATURES
D High-Side Switching D Low On-Resistance: 1.5 W D Moderate Threshold: –3.1 V D Fast Switching Speed: 17 ns D Low Input Capacitance: 60 pF Benefits D Ease in Driving Switches D Low Offset (Error) Voltage D Low-Voltage Operation D High-Speed Switching D Easily Driven Without BufferAPPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply, Converter Circuits D Motor Control TO-205AD (TO-39) (Case Drain) S 1 TO-226AA (TO-92) S1 G2 2 G 3 D Top View VP0300B TO-237 (Tab Drain) S1 G2 D3 Top