SSF2418E - MOSFET

Datasheet Summary

Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Features

SOT23-6.
Advanced trench MOSFET process technology.
Special designed for PWM, load switching and general purpose.

Silikron Semiconductor Co

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Datasheet Details

Part number	SSF2418E
Manufacturer	SilikrON Semiconductor Co
File Size	611.05 KB
Description	MOSFET
Datasheet	SSF2418E Datasheet
Additional preview pages of the SSF2418E datasheet.

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Full PDF Text Transcription

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Main Product Characteristics: VDSS 20V RDS(on) 18mohm(typ.) ID 6A Features and Benefits: SOT23-6  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF2418E Marking and Pin Assignments Schematic Diagram Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Published: Mar 6, 2010 |