SSF3324 Datasheet | Silikron Semiconductor Co

Main Product Characteristics: VDSS 30V RDS(on) 26.5mΩ(typ.) 5.8A ① SOT-23 Marking and pin Assignments Schematic Diagram Features and Benefits: - Advanced trench MOSFET process technology - Special designed for PWM, load switching and general purpose applications - Ultra low on-resistance with low gate charge - Fast switching and reverse body recovery - 150℃ operating temperature Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These Features bine to make this design an extremely efficient and reliable device for use in power switching application...