Datasheet Summary
Main Product Characteristics:
VDSS
900V
RDS(on) 0.85Ω(typ.)
ID 10A ①
Features and Benefits:
- Advanced MOSFET process technology
- Low On Resistance
- Low Gate Charge
- Fast switching and reverse body recovery
TO-3P
Marking and pin Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These Features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol ID @ TC = 25℃ ID @ TC = 100℃ IDM
PD @TC = 25℃
VDS VGS EAS...