SSF2649 Datasheet | Silikron Semiconductor

Features and Benefits: SOP-8  - Advanced trench MOSFET process technology - Special designed for PWM, load switching and general purpose applications - Ultra low on-resistance with low gate charge - Fast switching and reverse body recovery - 150℃ operating temperature SSF2649  D1 G1 G2 S1 D2 S2 Marking and pin Assignment  Schematic diagram        Description : It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications  Absolute max Rating: Drain-Source Voltage Gate-Source Voltage Parameter Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG Limit -20 ±10 -7.9 -30 5 -55 To 150 Unit V V A A W ℃ Thermal Resistance Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 85 ℃/W ©Silikron Semiconductor CO., LTD. 2011.05.25 .silikron.  Version: 1.0 page 1 of 6                                  Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Drain-Source On-State...