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SSF26NS60 Datasheet MOSFET

Manufacturer: Silikron Semiconductor

Overview: Main Product Characteristics: VDSS RDS(on) 600V 0.135Ω(typ.) ID 20A.

General Description

: The SSF26NS60 series MOSFETs is a new technology, which bines an innovative super junction technology and advance process.

This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving.

Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=13.8mH Avalanche Current @ L=13.8mH Operating Junction and Storage Temperature Range Max.

Key Features

  • High dv/dt and avalanche capabilities.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance SSF26NS60 Marking and pin Assignment Schematic diagram.

SSF26NS60 Distributor